Dry etching method

Details Dry etching method Dry etching method

1993-06-21

1994-12-27

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156653, 437228, H01L 2100

Patent

active

053762347

ABSTRACT:
A dry etching method wherein one compound selected from mercaptan, thioether and disulfide each having a fluorocarbon side chain is used as a main component of an etching gas. These compounds may form CF.sub.x.sup.+ and S on dissociation due to electric discharges, and contribute to high-rate etching and surface protection of a wafer. If a halogen compound such as CO, SOF.sub.2 or NOF is added to the etching gas, a high-rate etching reaction due to extraction of O atoms from SiO.sub.2 and structural reinforcement of carbonaceous polymer become possible. Also, S.sub.2 F.sub.2 may be added for reinforcing deposition of S. These effects lead to a reduction of the deposit amount of polymer necessary for highly selective processing, and contribute greatly to low pollution in a process.

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