Dry etching method

Details Dry etching method Dry etching method

1993-06-25

1994-12-27

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156662, 156653, 156657, H01L 2100

Patent

active

053762282

ABSTRACT:
A dry etching method wherein an etching gas containing carbonyl sulfide or COS is used. If carbonyl and C--O bonds derived from COS are introduced into a decomposition product of a resist mask 4, film quality of carbonaceous polymer becomes rigid, thereby exhibiting, despite a small amount of deposition, improvements in selectivity to the resist and selectivity to Si. CO* released from COS extracts O atoms in an SiO.sub.2 interlayer insulation film 3, and contributes to high etchrate. Sulfur or S contributes to surface protection along with carbonaceous polymer. If CH.sub.x F.sub.4-x, C.sub.m F.sub.n, S.sub.2 F.sub.2 and the like are used jointly with COS, further improvements can be achieved in high etchrate, high selectivity and low pollution.

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