Dry etching method

Details Dry etching method Dry etching method

1992-05-29

1994-05-17

Hearn, Brian

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156657, 156653, H01L 2100

Patent

active

053125185

ABSTRACT:
A dry etching method whereby an SiO.sub.2 layer and an Si.sub.3 N.sub.4 layer may be etched with high selectivity for each other. As etching gas, such sulfur fluorides as S.sub.2 F.sub.2 are used which, when dissociated by electric discharges, will form SF.sub.x.sup.+ as a main etchant for the SiO.sub.2 layer or F* as a main etchant for the Si.sub.3 N.sub.4 layer and release sulfur in the plasma. When the SiO.sub.2 layer is etched on the Si.sub.3 N.sub.4 layer as an underlying layer via a resist mask, nitrogen atoms, removed from the underlying layer upon exposure thereof to the plasma, will combine with sulfur in the plasma to form on the exposed surface thereof such sulfur nitride compounds as polythiazyl (SN).sub.x, which will, in turn, serve to achieve high selectivity for the underlying layer. The SiO.sub.2 layer can also be etched via an Si.sub.3 N.sub.4 mask patterned into a predetermined shape, in which case sulfur nitride compounds formed on the Si.sub.3 N.sub.4 mask will serve to achieve high selectivity therefor.

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