Dry etching method

Details Dry etching method Dry etching method

1992-12-14

1994-05-17

Quach, T. N.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156627, 156643, 156666, 156664, H01L 2100

Patent

active

053125150

ABSTRACT:
A dry etching method enabling etching of a layer of a copper (Cu) based material at a wafer heating temperature lower than heretofore, and a practically useful method for detecting the end point of etching. If the Cu layer is etched using an etching gas including a compound containing chlorine (Cl) and oxygen (O) as component elements or an etching gas including a compound containing Cl and a compound containing O as component elements, respectively, the Cu layer is removed not only in the form of copper chloride CuCl.sub.x but in the form of copper oxychloride CuCl.sub.x O.sub.y, where x is 1 to 2 and y is 1 to 8. Since CuCl.sub.x O.sub.y has a vapor pressure lower than that of CuCl.sub.x, a conventional etching reaction product, it is unnecessary to heat the wafer to higher temperatures as in the conventional practice, while there is no risk of a copper oxide film being formed on the surface of the Cu layer. The end point of etching may be detected by detecting a decrease in emission peak intensities in the molecular spectrum of CuCl appearing the specific wavelengths, such as 402 nm or 433 nm.

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"Silicon Processing for the VLSI Era"; vol. I, Process Technology; .COPYRGT.1986; Lattice Press; Sunset Beach, Calif.; pp. 565-567.
Ohno et al, "Reactive Ion Etching of Copper Films in SiCl.sub.4 and N.sub.2 Mixture", Japanese Journal of Applied Physics, vol. 28, No. 6, Jun. 1989, pp. L1070-L1072.

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