Dry etching method

Details Dry etching method Dry etching method

1992-10-20

1994-06-07

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156657, H01L 2100

Patent

active

053186680

ABSTRACT:
The invention provides an improved dry etching method for selectively etching a silicon nitride layer 3 formed on the surface of a SiO.sub.2 layer 2 formed on a p-type semiconductor substrate, the method comprising the steps of supplying a mixed gas of HBr and ClF.sub.3 to a reaction chamber wherein SiBr.sub.4, caused, during the dry etching, by a reaction of the silicon nitride layer 3 and the HBr contained in the mixed gas, partly deposits on an etching wall of the p-type semiconductor substrate 1 while at the same time an excess of the SiBr.sub.4 reacts, between the p-type semiconductor substrate 1 and a wall of the reaction chamber, with the ClF.sub.3 contained in the mixed gas to produce a fluoride. The fluoride thus produced can be easily discharged to the outside, since it is more volatile.

REFERENCES:
"Highly Selective Etching of Si.sub.3 N.sub.4 to SiO.sub.2 Employing Fluorine and Chlorine Atoms Generated by Microwave Discharge", J. Electrochem. Soc.; vol. 136; No. 7; Jul. 1989; pp. 2032-2034.

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