Dry etching method

Details Dry etching method Dry etching method

1993-07-22

1995-03-14

Nguyen, Nam

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 1566591, 156657, 156651, 156653, H01L 2100

Patent

active

053974310

ABSTRACT:
A dry etching method for etching an SiO.sub.2 interlayer insulation film 4 formed on an Si.sub.2 N.sub.4 underlying film 3 using an S.sub.2 F.sub.2 /N.sub.2 mixed gas. While the etching proceeds by way of F* and SF.sub.x.sup.+ yielded from S.sub.2 F.sub.2, atoms yielded similarly from S.sub.2 F.sub.2 and N atoms yielded from N.sub.2 are combined with each other, thus yielding sulfur nitride based compounds such as polythiazyl (SN).sub.x to be deposited on pattern sidewall surfaces. When the Si.sub.3 N.sub.4 underlying film 3 is exposed, N atoms in the film and S atoms in a plasma are combined to form (SN).sub.x. These (SN).sub.x in a gaseous phase and on solid surface protect wafer surfaces, improving selectivity. It is also possible to etch the SiO.sub.2 interlayer insulation film with an Si.sub.3 N.sub.4 mask, achieving high selectivity to the mask.

REFERENCES:
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patent: 4579623 (1986-04-01), Suzuki et al.
patent: 4992136 (1991-02-01), Tachi et al.
"The Merck Index", Windholz et al.; 10th ed.; 1983; pp. 1287-1288.
"Determination of the Vapor Pressure and Vaporization Coefficient of Polymeric Sulfur Nitride; (SN)x"; 1977; Inorgonic Chem. 16(12); Weter et al.; abstract only.
"D.C. Plasma Etching of Silicon by Sulphur Hexafluoride Mass Spectrometric Study of Discharge Products"; Wagner et al.; 1981; pp. 201-204.
Takuo Sugano, "Semiconductor Plasma Processing Technique", Sangyo Tosho Kabushiki Kaisha, pp. 133 to 134.
S6-2, Transactions of the Institute of Electrical Engineers of Japan, 1980, pp. S.6-5 to S.6-8.
Suto et al, "Highly Selective Etching of Si.sub.3 N.sub.4 to SiO.sub.2 Employing Fluorine and Chlorine Atoms Generated by Microwave Discharge", Proceedings of Symposium on Dry Process, vol. 88, No. 7, 1987, pp. 86-94.

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