Dry etching method

Details Dry etching method Dry etching method

1991-12-24

1993-04-06

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156666, H01L 2100

Patent

active

052000320

ABSTRACT:
A dry etching method enabling etching of a layer of a copper (Cu) based material at a wafer heating temperature lower than heretofore, and a practically useful method for detecting the end point of etching. If the Cu layer is etched using an etching gas including a compound containing chlorine (Cl) and oxygen (O) as component elements or an etching gas including a compound containing Cl and a compound containing O as component elements, respectively, the Cu layer is removed not only in the form of copper chloride CuCl.sub.x but in the form of copper oxychloride CuCl.sub.x O.sub.y, where x is 1 to 2 and y is 1 to 8. Since CuCl.sub.x O.sub.y has a vapor pressure lower than that of CuCl.sub.x, a conventional etching reaction product, it is unnecessary to heat the wafer to higher temperatures as in the conventional practice, while there is no risk of a copper oxide film being formed on the surface of the Cu layer. The end point of etching may be detected by detecting a decrease in emission peak intensities in the molecular spectrum of CuCl appearing the specific wavelengths, such as 402 nm or 433 nm.

REFERENCES:
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patent: 5091050 (1992-02-01), Fujino et al.
Ohno et al., "Reactive Ion Etching of Copper Films in SiCl.sub.4 and N.sub.2 Mixture", Japanese Journal of Applied Physics, vol. 28, No. 6, Jun. 1989, pp. L1070-L1072.

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