Dry etching Method

Details Dry etching Method Dry etching Method

1995-11-17

1997-06-03

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438 9, 438695, 438696, 216 67, H01L 2100

Patent

active

056350210

ABSTRACT:
There is disclosed a dry etching method capable of achieving the formation of vertical line patterns and the minimization of a difference in size between an isolated line pattern and an inner line pattern. When the line width of an inner line pattern is smaller than that of an isolated line pattern and when the width of a line pattern is greater than the width of a resist pattern, at least one parameter selected from the parameter group consisting of the pressure of a raw-material gas mixture introduced into a vacuum chamber, the exhaust amount of gas discharged from the vacuum chamber, a high-frequency electric power, the frequency of the high-frequency electric power, the rate of a lateral wall protecting gas in the raw-material gas mixture and the temperature of a sample stand, is changed such that the amounts in which the line patterns are etched, are increased and that the amount in which the inner line pattern is etched, is smaller than the amount in which the isolated line pattern is etched.

REFERENCES:
patent: 5352324 (1994-10-01), Gotoh et al.
patent: 5354418 (1994-10-01), Kumihashi et al.

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