Dry etching method

Details Dry etching method Dry etching method

1990-08-09

1993-02-02

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156662, 156345, H01L 2100

Patent

active

051835312

ABSTRACT:
A dry etching method for etching a substrate such as semiconductors. A vacuum ultraviolet radiation or soft X-rays is used as a photon beam source for generating a reaction of dry etching, and also an etching gas in introduced into a reaction chamber after being activated by a microwave radiation, whereby a reaction of the etching gas with a substrate takes place at a region of the processing material to which the electromagnetic wave is irradiated, and a dry etching is accomplished at the region etched by the reaction of the etching gas.

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