Dry etching apparatus and method

Details Dry etching apparatus and method Dry etching apparatus and method

1990-06-18

1992-02-11

Nguyen, Nam X.

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20429833, 156643, 156646, 156345, H01L 21306, B44C 122, C03C 1500

Patent

active

050873415

ABSTRACT:
A dry etching apparatus with the use of reactive gas plasma is disclosed. The apparatus comprises a vacuum chamber, and first and second electrodes opposite to each other in the chamber for generating therebetween gas plasma by discharging while introducing reactive gas in the chamber thereby etching a sample placed on the first electrode. A cover member is provided for covering at least the periphery portion positioned at the outer side of the sample on the surface of the first electrode. The reactive gas introducer is provided on the second electrode at the position opposite to the sample thereby directing the gas to the sample.

REFERENCES:
patent: 4255230 (1981-03-01), Zajac
patent: 4297162 (1981-10-01), Mundt et al.
patent: 4383885 (1983-05-01), Maydan et al.
patent: 4384918 (1983-05-01), Abe
patent: 4397724 (1983-08-01), Moran
patent: 4399016 (1983-08-01), Tsukada et al.
patent: 4400235 (1983-08-01), Coquin et al.
patent: 4482419 (1984-11-01), Tsukada et al.

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