Dry etching apparatus and method

Details Dry etching apparatus and method Dry etching apparatus and method

1996-04-29

1997-12-30

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156345, 216 60, 216 67, H01L 2100

Patent

active

057025622

ABSTRACT:
Disclosed is a dry etching apparatus for etching an etched material located in an etching chamber by an etching gas plasma, which has: a plurality of emission detectors for detecting intensities of different wavelength components which are generated in etching reaction; an emission analyzer for analyzing an intensity ratio therebetween from the detected intensities; a process data computing circuit for computing a selectivity ratio and etching rate to different films from an output signal of the emission analyzer; and an etching parameter operational controller for feedback-controlling RF power, degree of vacuum and gas flow rate or gas flow rate ratio on the basis of an output signal of the process data computing circuit.

REFERENCES:
patent: 4767496 (1988-08-01), Hieber
patent: 5374327 (1994-12-01), Imahashi et al.
patent: 5642296 (1997-06-01), Saxena

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