Dry etching and mirror deposition processes for silicone...

Details Dry etching and mirror deposition processes for silicone... Dry etching and mirror deposition processes for silicone...

2005-08-30

2005-08-30

McDonald, Rodney G. (Department: 1753)

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

C204S192120, C430S494000, C427S255110

Reexamination Certificate

active

06936141

ABSTRACT:
According to the invention semiconductor processing procedures can be applied to silicone elastomeric materials. The surface tension of the elastomeric material is changed by depositing a thin layer of silicon, silicon nitride, silicon dioxide or a combination thereof onto the elastomer's exposed surface. In the illustrated embodiment it is shown that it is possible to deposit a thin layer of silicon dioxide onto the elastomer's exposed surface through re*active sputter deposition of silicon dioxide within an argon-oxygen plasma. In another plasma fabrication procedure, the elastomer material is directionally etched using a standard RF plasma etching system and a dry chemical oxygen-Freon removal procedure, which procedure volatilizes all of the components of the polydimethylsilicone (PDMS) or GE's RTV elastomer material.

REFERENCES:
patent: 5906871 (1999-05-01), Takebe et al.
patent: 6280642 (2001-08-01), Ikeda et al.

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