Dry etching aluminum

Details Dry etching aluminum Dry etching aluminum

1981-01-08

1983-02-15

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156656, 1566591, 156665, 204192E, C23F 102, H01L 21306, C03C 1500, C03C 2506

Patent

active

043739903

ABSTRACT:
A dry etching process for aluminum uses a silicon tetrachloride gas ambient to which is applied radio frequency power for ionizing the gas. By appropriate control of the gas pressure and power density, anisotropic etching is achieved. This gas system also is useful for etching dual layers of aluminum and doped polycrystalline silicon.

REFERENCES:
patent: 3522118 (1970-07-01), Taylor et al.
patent: 4026742 (1977-05-01), Fujino
patent: 4030967 (1977-06-01), Ingrey et al.
patent: 4073669 (1978-02-01), Heinecke et al.
patent: 4182646 (1980-01-01), Zajac
patent: 4256534 (1981-03-01), Levinstein et al.
patent: 4299680 (1981-11-01), Fontana et al.
Philips Tech. Rev. 38, No. 7/8, 1978/79, pp. 200-210, Plasma etching in IC Technology by Kalter et al.
IBM Tech. Disclosure Bulletin, vol. 20, No. 5, Oct. 1977, Isotropic and Anisotropic Etching In a Diode System by Gartner et al, pp. 1744-1745.

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