Dry etcher apparatus for preventing residual reaction gas from c

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

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118719, 134 11, C23F 102

Patent

active

059721618

ABSTRACT:
A dry etcher for etching a thin film on a wafer, includes an etching chamber having the wafer loaded therein and a supply system for supplying a reaction gas to the etching chamber to etch the thin film on the wafer. A loadlock chamber controls an etching atmosphere before and after the wafer is loaded in and unloaded from the etching chamber. A pumping device pumps the reaction gas out of the etching chamber and the loadlock chamber after the thin film is etched. A heater or cleaning device prevents any residual reaction gas remaining in the etching chamber and loadlock chamber from condensing on the wafer when the wafer is exposed to ambient atmosphere after exiting the loadlock chamber. The heater or cleaning device may be disposed in the etching chamber or the loadlock chamber.

REFERENCES:
patent: 5240556 (1993-08-01), Ishikawa et al.
patent: 5344525 (1994-09-01), Cathey, Jr.
patent: 5554563 (1996-09-01), Chu et al.
patent: 5670421 (1997-09-01), Nishitani et al.
patent: 5830279 (1998-11-01), Hackenberg

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