Dry etcher apparatus and method of preventing residual reaction

Details Dry etcher apparatus and method of preventing residual reaction Dry etcher apparatus and method of preventing residual reaction

1998-12-24

2000-06-13

Gulakowski, Randy

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

216 2, 216 58, B08B 3008

Patent

active

060736364

ABSTRACT:
A dry etcher for etching a thin film on a wafer, includes an etching chamber having the wafer loaded therein and a supply system for supplying a reaction gas to the etching chamber to etch the thin film on the wafer. A loadlock chamber controls an etching atmosphere before and after the wafer is loaded in and unloaded from the etching chamber. A pumping device pumps the reaction gas out of the etching chamber and the loadlock chamber after the thin film is etched. A heater or cleaning device prevents any residual reaction gas remaining in the etching chamber and loadlock chamber from condensing on the wafer when the wafer is exposed to ambient atmosphere after exiting the loadlock chamber. The heater or cleaning device may be disposed in the etching chamber or the loadlock chamber.

REFERENCES:
patent: 4693777 (1987-09-01), Hazano et al.
patent: 5344525 (1994-09-01), Cathey, Jr. et al.
patent: 5462892 (1995-10-01), Gabriel
patent: 5554563 (1996-09-01), Chu et al.
patent: 5672239 (1997-09-01), DeOrnellas
patent: 5730834 (1998-03-01), Gabriel
patent: 5759334 (1998-06-01), Kojima et al.
patent: 5830279 (1998-11-01), Hackenberg

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