Dry etch process for selectively etching non-homogeneous materia

Details Dry etch process for selectively etching non-homogeneous materia Dry etch process for selectively etching non-homogeneous materia

1988-04-29

1989-08-08

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156652, 156655, 156657, 1566591, 156662, 20419233, 20419235, 20419237, 252 791, 437228, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

048550159

ABSTRACT:
A plasma etching process employs a halogen liberating gas to selectively etch a top semiconductor layer of a bilayer with respect to a bottom semiconductor layer. A fluorine rich gas reacts with a top germanium layer for removal thereof, while forming a passivating surface layer on a bottom silicon layer to inhibit the silicon' plasma reaction therewith.

REFERENCES:
patent: 4374698 (1983-02-01), Sanders et al.
patent: 4465552 (1984-08-01), Bobbio et al.
patent: 4668337 (1987-05-01), Sekine

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