Dry etch process for forming champagne profiles, and dry etch ap

Details Dry etch process for forming champagne profiles, and dry etch ap Dry etch process for forming champagne profiles, and dry etch ap

1990-01-30

1991-05-07

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156644, 156646, 156651, 156653, 156657, 156663, 156345, 20419237, 20429834, 252 791, H01L 21312, B44C 122, C03C 1500, C03C 2506

Patent

active

050134000

ABSTRACT:
A two-step process for forming champagne profiles on semiconductor wafers that provide, when metallized, good reliability, microcracking-free contacts and vias is disclosed. Dry etch apparatus having electrodes in a triode configuration, two plasma forming regions, and a pressure control system operative to provide a wide setpoint pressure range is also disclosed.

REFERENCES:
patent: 4776918 (1988-10-01), Otsubo et al.
patent: 4889588 (1989-12-01), Fior
"Contact Hole and Via Profiling by High Rate Isotropic and Anisotropic Etching of Oxides", V. Grewal et al., Jun. 15-16, 1987 V-MIC Conf. 1987 IEEE.
"Silicon Dioxide Profile Control for Contacts and Vias", Leslie Giffen et al., Solid State Technology, Apr. 1989.
"Isotropic Plasma Etching of Doped and Undoped Silicon Dioxide for Contact Holes and Vias", W. G. M. van den Hoek, et al., J. Vac. Sci. Technol. A 7(3), May/Jun. 1989, pp. 670-675.
Waferetch .RTM. Application Note, GCA Waferetch 606/616 Triode Etch Systems, data sheet, 1987 GCA Corporation, Plasma Systems Division.
Waferetch.RTM. Application Note, Etching of Aluminum and Aluminum-Silicon 1986 GCA Corporation, Plasma Systems Division.
GCA Waferetch Application Note, Flexibility of Process Control with a Triode Etcher, E. Bogle-Rohwer, et al., 1987 GCA Corporation, Plasma Systems Division.

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