Dry etch method using non-halocarbon source gases

Details Dry etch method using non-halocarbon source gases Dry etch method using non-halocarbon source gases

1994-02-03

1995-07-11

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

H01L 2100

Patent

active

054317789

ABSTRACT:
A layer of material (14) comprising silicon, such as an SiO.sub.2 layer, overlying a silicon substrate (12) of a semiconductor device (10), is dry etched without the need for traditional halocarbon gases (such as CHF.sub.3, CF.sub.4, and C.sub.2 F.sub.6) which are known green-house gases. A fluorine source, for producing the active fluorine radicals needed to etch silicon, is selected from either HF or F.sub.2 gases. A carbon-oxygen source, for providing and stabilizing polymer build-up in the reactor, is selected from either CO or CO.sub.2. An additional hydrogen source may be added as needed.

REFERENCES:
patent: 4807016 (1989-02-01), Douglas
patent: 5122225 (1992-06-01), Douglas
Nordine, et al.; "Chemiluminescent Titration of F(g) with Cl2(g) and Microwave Production of Atomic Fluorine;" Journal of Chemical Soc. Faraday Trans. I 72(7), pp. 1526-1533 (1976).
Nordine, et al.; "Kinetics of the F,F2/Gd(s,v) Reactions;" Amer. Soc. for Metals and The Metallurgical Socieity of AIME/Metallurgical Trans. A; vol. 14A; pp. 53-60 (1983).
Flamm, et al.; "Reaction of fluorine atoms with SiO2; J. Appl. Phys."; vol. 50; No. 10; pp. 6211-6213 (1979).

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