Dry etch endpoint method

Details Dry etch endpoint method Dry etch endpoint method

1997-03-13

1998-07-14

Breneman, R. Bruce

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Optical characteristic sensed

438 9, 438720, 438963, H01L 21302

Patent

active

057803153

ABSTRACT:
An improved method for selecting etch endpoint when dry etching conductive material layers for use in semiconductor device circuits has been created. The more precise endpoint selection procedure produces metallization patterns which are free from residues (resulting from under-etching) and free from sidewall attack and/or pattern degradation (resulting from over-etching). The method avoids costly and time consuming pre-sorting of substrates according to product pattern density.

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