Dry developing method

Details Dry developing method Dry developing method

2006-01-17

2006-01-17

Ahmed, Shamim (Department: 1765)

Etching a substrate: processes

Masking of a substrate using material resistant to an etchant

Mask is multilayer resist

C216S041000, C216S067000, C430S296000, C430S313000

Reexamination Certificate

active

06986851

ABSTRACT:
A dry developing method for drawing a resist formed on a processed body by leading processing gas between parallel flat electrodes installed in a vacuum processing container and forming the plasma of the processing gas by applying a high frequency power to the electrodes, comprising the step of plasma-processing the resist on an etched layer having an already developed upper layer resist containing silicon and a lower layer resist installed in contact with the lower layer of the upper layer resist, wherein the lower layer resist is processed by a first process for plasma-processing by using the mixed gas of carbon monoxide gas and oxygen gas and a second step for plasma-processing by using the mixed gas of nitrogen gas and hydrogen gas, whereby an accurate drawing can be applied efficiently to the resist.

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