Dry developable resist etch chemistry

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

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430325, 430326, 430323, G03C 500

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active

050413627

ABSTRACT:
A photoresist layer (16) is selectively exposed to ultraviolet radiation (22). The exposed regions (23) are silylated with a silicon-liberating compound such as HMDS to create silylated regions (29). A plasma (32) is formed from a compound including at least one central atom and hydrogen. This plasma is used to differentially etch the non-protected regions (30) of the photoresist while forming a hard mask (42) from the silylated regions (29). Formation of filaments (38) on the developed photoresist sidewalls is avoided because of the low mass of the hydrogen ions and the volatility of any hydrides produced from materials sputtered from the substrate. Any filaments which are formed are easily cleaned up with conventional chemistry.

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Taylor et al, "The Role of Inorganic Materials in Dry-Processed Resist Technology", 400 Solid State Technol., 27(2), Feb. 1984, pp. 145-155.
Coopmans, et al., Solid State Technology, Jun. 1987; "DESIRE: A New Route to Submicron Optical Lithography".
Visser, et al., SPIE Proc., 1987, "Mechanism and Kinetics of Silylation of Resist Layers from the Gas Phase".
Reichmanis, et al., Solid State Technology, Aug. 1985, "Approaches to Resists for Two-Level RIE Pattern Transfer Applications".
Roland, et al., SPIE Proc.; "The Mechanism of the Desire Process".

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