Dry cleaning process for cleaning a surface

Details Dry cleaning process for cleaning a surface Dry cleaning process for cleaning a surface

1993-01-12

1996-11-26

El-Arini, Zeinab

Cleaning and liquid contact with solids

Processes

For metallic, siliceous, or calcareous basework, including...

134 3, 1566461, B08B 500, C23F 100, C03C 2300

Patent

active

055781330

ABSTRACT:
A dry cleaning process for removing metal contaminants from a surface of an oxide film includes the steps of: forming a reaction area on the oxide film such that a silicon surface is formed in correspondence to the reaction area, supplying a dry cleaning gas selected from a group essentially consisting of chlorine, bromine, hydrogen chloride, hydrogen bromide and a mixture thereof, to the oxide film including the reaction area, to produce silicon halide molecules as a result of a reaction between the dry cleaning gas and the silicon surface, supplying the silicon halide molecules to a surface of the oxide film, and removing metal elements existing on the surface of the oxide film as a result of a reaction between the metal element and the dry cleaning gas under a presence of the silicon halide molecules.

REFERENCES:
patent: 5030319 (1991-07-01), Nishino et al.
patent: 5213622 (1993-05-01), Bohling et al.
Sugino et al, IEICE Trans, Electron. vol. E75-C, No. 7, Jul., 1992, pp. 829-833.
Sugino et al, Extended Abstract of SSDM '87, Aug. 25-27, 1987, pp. 207-210.
Rinji Sugino et al., "Ultraviolet excited Cl-radical etching of Si through native oxides", Journal of Applied Physics, vol. 76, No. 9, 1 Nov. 1994.

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