Dry cleaning of semiconductor processing chambers using non-meta

Details Dry cleaning of semiconductor processing chambers using non-meta Dry cleaning of semiconductor processing chambers using non-meta

1997-01-21

1998-05-19

Breneman, R. Bruce

Compositions

Etching or brightening compositions

438905, C09K 1300, H01L 2100

Patent

active

057531374

ABSTRACT:
In accordance with the present invention, the plasma dry cleaning rate of semiconductor process chamber walls can be improved by placing a non-gaseous dry cleaning enhancement material in the position which was occupied by the workpiece during semiconductor processing. The non-gaseous dry cleaning enhancement material is either capable of generating dry cleaning reactive species and/or of reducing the consumption of the dry cleaning reactive species generated from the plasma gas feed to the process chamber.
When process chamber non-volatile contaminant deposits are removed from plasma process chamber surfaces during plasma dry cleaning by placing a non-gaseous source of reactive-species-generating material within the plasma process chamber, the non-gaseous source of reactive-species-generating material need not be loacted upon or adjacent the workpiece support platform: however, this location provides excellent cleaning results in typical process chamber designs.

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