Cleaning and liquid contact with solids – Processes – Including application of electrical radiant or wave energy...
Patent
1995-07-07
1997-11-11
Ludlow, Jan
Cleaning and liquid contact with solids
Processes
Including application of electrical radiant or wave energy...
134 1, 134 21, 134 2214, 134 2219, 1566431, 427569, B08B 700
Patent
active
056859163
ABSTRACT:
In accordance with the present invention, the plasma dry cleaning rate of semiconductor process chamber walls can be improved by placing a non-gaseous dry cleaning enhancement material in the position which was occupied by the workpiece during semiconductor processing. The non-gaseous dry cleaning enhancement material is either capable of generating dry cleaning reactive species and/or of reducing the consumption of the dry cleaning reactive species generated from the plasma gas feed to the process chamber. When process chamber non-volatile contaminant deposits are removed from plasma process chamber surfaces during plasma dry cleaning by placing a non-gaseous source of reactive-species-generating material within the plasma process chamber, the non-gaseous source of reactive-species-generating material need not be loacted upon or adjacent the workpiece support platform: however, this location provides excellent cleaning results in typical process chamber designs.
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Rhoades Charles Steven
Ye Yan
Yin Gerald Z.
Applied Materials Inc.
Church Shirley L.
Ludlow Jan
Sgarbossa Peter J.
Wilson James C.
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