Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2007-06-26
2007-06-26
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Systems using particular element
Resistive
C365S158000, C365S107000
Reexamination Certificate
active
11169535
ABSTRACT:
A variable resistance element is configured to be provided with a perovskite-type oxide between a first electrode and a second electrode, of which electric resistance between the first electrode and the second electrode is changed by applying a voltage pulse of a predetermined polarity between the first electrode and the second electrode, and the variable resistance element has a resistance hysteresis characteristic, in which a changing rate of a resistance value is changed from positive to negative with respect to increase of a cumulative pulse applying time in the application of the voltage pulse. The voltage pulse is applied to the variable resistance element so that the cumulative pulse applying time is not longer than a specific cumulative pulse applying time, in which the changing rate of the, resistance value is changed from positive to negative with respect to increase of the cumulative pulse applying time in the resistance hysteresis characteristic.
REFERENCES:
patent: 6204139 (2001-03-01), Liu et al.
patent: 6850429 (2005-02-01), Rinerson et al.
patent: 2003/0156445 (2003-08-01), Zhuang et al.
patent: 2005/0151156 (2005-07-01), Wu et al.
patent: 1 486 985 (2004-12-01), None
patent: 1 486 985 (2004-12-01), None
patent: 1 507 297 (2005-02-01), None
patent: WO-2005/059921 (2005-06-01), None
Liu, S.Q. et al. (May 8, 2000). “Electric-Pulse-Induced Reversible Resistance Change Effect In Magnetoresistive Films,”Applied Physics Letters76(19):2749-2751.
European Search Report mailed on Nov. 4, 2005 for European Patent Application No. 05254028.3, 4 pages.
Zhuang, W.W. et al. (Dec. 8-11, 2002). “Novell Colossal Magnetoresistive Thin Film Nonvolatile Resistance Random Access Memory (RRAM),”IEDM Technical Digest, International Electron Devices Meeting 2002, San Francisco, CA, pp. 193-196.
Chen, Y-C. et al. (2003). “An Access-Transistor-Free (OT/1R) Non-Volatile Resistance Random Access Memory (RRAM) Using a Novel Threshold Switching, Self-Rectifying Chalcogenide Device,”IEEE, pp. 37.4.1-37.4.4.
Awaya Nobuyoshi
Hosoi Yasunari
Ishihara Kazuya
Kobayashi Shinji
Tamai Yukio
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