Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2008-06-03
2008-06-03
Tran, Thuy Vinh (Department: 2821)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C345S205000
Reexamination Certificate
active
07381987
ABSTRACT:
A driving circuit for a display device including a plurality of stages connected to each other and sequentially generating output signals, wherein each of the stages comprises a plurality of transistors, wherein each of the transistors comprises: a control electrode; a first insulating layer formed on the control electrode; a semiconductor layer formed on the first insulating layer; an input electrode, at least a portion of which formed on the semiconductor layer; an output electrode, at least a portion of which formed on the semiconductor layer; and a second insulating layer formed on the input and output electrodes, wherein a thickness ratio of the semiconductor layer to the first insulating layer ranges from 0.3 to 1.5.
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Kim Sung-Man
Kong Hyang-Shik
Lee Jong-hwan
Cantor & Colburn LLP
Samsung Electronics Co,. Ltd.
Tran Thuy Vinh
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