Driving circuit

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S173000, C257S368000, C257S369000, C257S370000, C257S500000, C257S502000

Reexamination Certificate

active

11255883

ABSTRACT:
A driving circuit and a data-line driver is provided which are capable of improving the tolerance to noise between adjacent terminals by using a conventional CMOS process while keeping the chip size small, because a high-density N-diffusion layer (116) is provided in an isolation region (115) to minimize a collector current of a parasitic NPN transistor (102).

REFERENCES:
patent: 5903032 (1999-05-01), Duvvury
patent: 5912494 (1999-06-01), Yu
patent: 6066879 (2000-05-01), Lee et al.
patent: 6459127 (2002-10-01), Lee et al.
patent: 6541824 (2003-04-01), Lee et al.
patent: 6690067 (2004-02-01), Ker et al.
patent: 7071528 (2006-07-01), Ker et al.

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