Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-07-17
2007-07-17
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S173000, C257S368000, C257S369000, C257S370000, C257S500000, C257S502000
Reexamination Certificate
active
11255883
ABSTRACT:
A driving circuit and a data-line driver is provided which are capable of improving the tolerance to noise between adjacent terminals by using a conventional CMOS process while keeping the chip size small, because a high-density N-diffusion layer (116) is provided in an isolation region (115) to minimize a collector current of a parasitic NPN transistor (102).
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patent: 7071528 (2006-07-01), Ker et al.
Inoue Yukihiro
Seike Mamoru
Pert Evan
Steptoe & Johnson LLP
Tran Tan
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