Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing
Reexamination Certificate
2006-02-21
2006-02-21
Elms, Richard (Department: 2824)
Static information storage and retrieval
Read/write circuit
Flip-flop used for sensing
C365S189090, C365S222000, C365S226000
Reexamination Certificate
active
07002863
ABSTRACT:
Circuits and methods for driving a DRAM sense amplifier having low threshold voltage PMOS transistors are described. The source terminal of a low VtpPMOS transistor is maintained at ground potential during DRAM standby mode. The source terminal of the low VtpPMOS transistor is raised to an intermediate supply voltage responsive to a transition from DRAM standby mode to either DRAM read mode, write mode, or refresh mode and prior to development of a differential voltage between the gate and drain terminals of the low VtpPMOS transistor. These circuits and methods advantageously limit current loss through the low VtpPMOS transistor when the differential voltage develops between the gate and drain terminals of that low VtpPMOS transistor and in the event of a word line and digital line short-circuit.
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Elms Richard
Fish & Neave IP Group of Ropes & Gray LLP
Luu Pho M.
Micro)n Technology, Inc.
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