Driver for multi-voltage island/core architecture

Electronic digital logic circuitry – Interface – Supply voltage level shifting

Reexamination Certificate

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Details

C326S121000, C326S062000, C327S333000

Reexamination Certificate

active

11276169

ABSTRACT:
A system and method for providing a driver for a multi-voltage island/core architecture of an integrated circuit chip are provided. A complementary metal oxide semiconductor (CMOS) inverter is built with a high threshold voltage p-channel field-effect transistor (hi-Vt PFET) and a regular threshold voltage n-channel field-effect transistor (NFET), which uses the maximum positive voltage supply (Vdd) on the chip. The threshold voltage of the hi-Vt PFET is determined based on the maximum Vdd, the Vdd of the Voltage island/core that drives the CMOS inverter, and a subthreshold leakage current requirement of the hi-Vt PFET.

REFERENCES:
patent: 6731154 (2004-05-01), Bednar et al.

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