Driver for driving a load using a charge pump circuit

Details Driver for driving a load using a charge pump circuit Driver for driving a load using a charge pump circuit

2007-04-02

2008-10-14

Rose, Kiesha L (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S300000, C257S312000

Reexamination Certificate

active

07436015

ABSTRACT:
A charge pump circuit includes MOSFETs and MOS capacitors formed on the same substrate. Each of the MOS capacitors has a multiplicity of first electrodes formed in one region of the substrate, insulating layers formed on/above respective substrate regions between neighboring first electrodes, each layer covering at least the respective substrate region, and a multiplicity of second electrodes formed on/above the respective insulating layers. The MOS capacitors have improved frequency response.

REFERENCES:
patent: 5544102 (1996-08-01), Tobita et al.
patent: 6303957 (2001-10-01), Ohwa
patent: 58-159367 (1983-09-01), None
patent: 02-058365 (1990-02-01), None
patent: 06-283667 (1994-10-01), None
patent: 09-008229 (1997-01-01), None
patent: 2000-057790 (2000-02-01), None

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