Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2011-08-02
2011-08-02
Hur, J. H. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Resistive
C365S151000, C365S189140, C365S189150, C365S189160, C365S189090, C365S189070, C977S708000, C977S723000, C977S940000, C977S943000
Reexamination Certificate
active
07990751
ABSTRACT:
A nanogap switching element is equipped with an inter-electrode gap portion including a gap of a nanometer order between a first electrode and a second electrode. A switching phenomenon is caused in the inter-electrode gap portion by applying a voltage between the first and second electrodes. The nanogap switching element is shifted from its low resistance state to its high resistance state by receiving a voltage pulse application of a first voltage value, and shifted from its high resistance state to its low resistance state by receiving a voltage pulse application of a second voltage value lower than the first voltage value. When the nanogap switching element is shifted from the high resistance state to the low resistance state, a voltage pulse of an intermediate voltage value between the first and second voltage values is applied thereto before the voltage pulse application of the second voltage value thereto.
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Furuta Shigeo
Horikawa Masayo
Masuda Yuichiro
Naitoh Yasuhisa
Shimizu Tetsuo
Crowell & Moring LLP
Funai Electric Advanced Applied Technology Research Institute In
Funai Electric Co. Ltd.
Hur J. H.
National Institute of Advanced Industrial Science and Technology
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