Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-04-06
2008-12-02
Lindsay, Jr., Walter L. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S151000, C438S155000, C438S486000
Reexamination Certificate
active
07459355
ABSTRACT:
A data holding control signal for each data line is supplied to a plurality of source followers that are connected together in parallel. The parallel-connected source followers are a combination of at least one first follower that is illuminated with laser light only once and at least one second follower that is illuminated twice. A width of the laser light illumination for crystallization is equal to a pitch of the source followers multiplied by an integer that is not less than 3.
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Kawasaki Yuji
Koyama Jun
Ford Kenisha V
Lindsay Jr. Walter L.
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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