Drive circuit for a gate semiconductor device

Details Drive circuit for a gate semiconductor device Drive circuit for a gate semiconductor device

1975-06-09

1977-01-04

Zazworsky, John

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

315364, 315408, H03K 1772, H01J 2976

Patent

active

040016072

ABSTRACT:
A drive circuit for a gated semiconductor device includes a switching device which provides first and second conduction states. The switching device is coupled to a source of direct current potential by means of a first inductor and coupled to the gate of the gated semiconductor device by means of a capacitor. A second inductor is coupled to the gate of the gated semiconductor device. Negative current is produced in the gate of the gated semiconductor device and energy is stored in first and second inductors during the first conduction state of the switching device. Positive current is produced in the gate of the gated semiconductor device during the second conduction state. The first and second inductors provide for enhancement of the positive gate current and also charging of the capacitor during the second conduction state.

REFERENCES:
patent: 3300680 (1967-01-01), Saudinaitis
patent: 3459972 (1969-08-01), Harris
patent: 3821565 (1974-06-01), Horinaga
patent: 3912945 (1975-10-01), Nakagawa

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