Coating processes – Direct application of electrical – magnetic – wave – or... – Pretreatment of substrate or post-treatment of coated substrate
Patent
1997-10-30
2000-05-16
Padgett, Marianne
Coating processes
Direct application of electrical, magnetic, wave, or...
Pretreatment of substrate or post-treatment of coated substrate
427545, 427546, 427586, 427597, 427 78, 427253, 42725519, 42725531, B05D 300, B05D 512, C23C 1600
Patent
active
060634537
ABSTRACT:
An electron-emitting device having an electroconductive film including an electron-emitting region and arranged between a pair of electrodes is manufactured by forming an electroconductive film on a substrate and producing an electron-emitting region in the electroconductive film. The electroconductive film is formed on the substrate by heating the substrate in an atmosphere containing a gasified organic metal compound to a temperature higher than the decomposition of the gasified organic metal compound.
REFERENCES:
patent: 3978247 (1976-08-01), Brandy et al.
patent: 4543270 (1985-09-01), Oprysko et al.
patent: 4743463 (1988-05-01), Ronn et al.
patent: 4948623 (1990-08-01), Beach et al.
patent: 4957851 (1990-09-01), Tomida et al.
patent: 4970196 (1990-11-01), Kim et al.
patent: 4987006 (1991-01-01), Williams et al.
patent: 5136212 (1992-08-01), Eguchi et al.
patent: 5139818 (1992-08-01), Mance
patent: 5376409 (1994-12-01), Kaloyeros et al.
patent: 5407710 (1995-04-01), Baum et al.
Translation of DE-05-2113336, German Patent to Thomson-CSF, Sep. 1971.
The Electrochemical Society, Inc./Vapor Deposition, Carroll F. Powell, pp. 248-251, "Chemical Vapor Deposition". No Date Given.
Thin Film Processes, John L. Vossen, pp. 261-265 & 315, 1978, "Chemical Vapor Deposition of Inorganic Thin Films". No Month.
Patent Abstracts of Japan, vol. 016 No. 064 (E-1167), Feb. 18, 1992 & JP-A-03 261026 (Canon Inc.), Nov. 20, 1991. M.Shenya.
Patent Abstracts of Japan, vol. 014, No. 573 (E-1015), Dec. 19, 1990 & JP-A-02 247936 (Canon Inc.), Oct. 3, 1990. N. Ichiro.
Patent Abstracts of Japan, vol. 016 No. 271 (E-1218), Jun. 18, 1992 & JP-A-04 065050 (Canon Inc.), Mar. 2, 1992. I. Hisami.
Patent Abstracts of Japan, vol. 012 No. 311 (M-734), Aug. 24, 1988 & JP-A-63 082788 (Matsushita Electric In Co Ltd), Apr. 13, 1988.
Patent Abstracts of Japan, vol. 016 No. 434 (M-1308), Sep. 10, 1992 & JP-A-04 147888 (Fuji Xerox Co Ltd), May 21, 1992.
Kawade Hisaaki
Niibe Masahito
Ohnishi Toshikazu
Okamura Yoshimasa
Tomida Yoshinori
Canon Kabushiki Kaisha
Padgett Marianne
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