Drive circuit and drain extended transistor for use therein

Details Drive circuit and drain extended transistor for use therein Drive circuit and drain extended transistor for use therein

2006-04-20

2009-10-13

Wojciechowicz, Edward (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S401000, C257S408000, C257S773000

Reexamination Certificate

active

07602019

ABSTRACT:
A transistor comprises a source region of a first conductivity type and electrically communicating with a first semiconductor region. The transistor also comprises a drain region of the first conductivity type and electrically communicating with a second semiconductor region that differs from the first semiconductor region. An interface exists between the first semiconductor region and the second semiconductor region. The transistor also comprises a voltage tap region comprising at least a portion located in a position that is closer to the interface than the drain region. A mixed technology circuit is also described.

REFERENCES:
patent: 6313696 (2001-11-01), Zhang
patent: 7333351 (2008-02-01), Disney
patent: 2002/0043670 (2002-04-01), Zehnich

Affiliated with

Also associated with

Rating

Drive circuit and drain extended transistor for use therein does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Drive circuit and drain extended transistor for use therein, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Drive circuit and drain extended transistor for use therein will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4130785