DRAMS constructions and DRAM devices

Details DRAMS constructions and DRAM devices DRAMS constructions and DRAM devices

2006-09-12

2006-09-12

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S336000, C257S905000

Reexamination Certificate

active

07105881

ABSTRACT:
The invention includes a DRAM device. The device has an access transistor construction, and the access transistor construction has a pair of source/drain regions. A halo region is associated with one of the source/drain regions of the access transistor construction and no comparable halo region is associated with the other of the source/drain regions of the access transistor construction. The invention also encompasses methods of forming DRAM devices.

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