Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2008-01-24
2009-06-30
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S207000, C365S189090
Reexamination Certificate
active
07554870
ABSTRACT:
In one embodiment, a dynamic random access memory (DRAM) is provided that includes: a plurality of rows of memory cells, each of the memory cell rows being arranged into columns, wherein each of the memory cell rows is crossed by a row of four word lines, and wherein each of the columns is crossed by a bit line; a plurality of sense amplifiers corresponding to the bit lines such that a single sense amplifier corresponds to every four bit lines; and a plurality of 4:1 multiplexers corresponding to the plurality of sense amplifiers, each 4:1 multiplexer coupling its corresponding sense amplifier to its corresponding four bit lines.
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Afghahi Morteza (Cyrus)
Terzioglu Esin
Winograd Gil I.
Haynes & Boone LLP.
Ho Hoai V
Lappas Jason
Novelics, LLC
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