Dram with dummy word lines

Details Dram with dummy word lines Dram with dummy word lines

1998-12-29

1999-09-14

Nelms, David

Static information storage and retrieval

Systems using particular element

Capacitors

365210, 3651852, 36518523, G11C 1124

Patent

active

059532475

ABSTRACT:
A plurality of word lines are disposed on the surface of a semiconductor substrate in a first direction. Two dummy word lines are disposed outside of the outermost word line among the word lines. MISFETs are disposed in correspondence with the word lines and dummy word lines. MISFETs are regularly disposed in the first direction and in a second direction crossing the first direction. One storage region among the source and drain regions of each MISFET is formed with a storage contact hole. The storage regions are distributed only in an area inside of the outermost dummy word line among the dummy word lines. A capacitor is connected to the storage region at the bottom of each storage contact hole. Different voltages are applied to the dummy word lines and the bit regions disposed outside of the outermost dummy word line. A semiconductor device capable of suppressing a standby current error is provided.

REFERENCES:
patent: 4612565 (1986-09-01), Shimizu et al.
patent: 4830977 (1989-05-01), Katto et al.
patent: 5017507 (1991-05-01), Miyazawa
patent: 5264712 (1993-11-01), Murata et al.

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