Dram with concentric adjacent capacitors

Details Dram with concentric adjacent capacitors Dram with concentric adjacent capacitors

1991-04-02

1993-08-31

Larkins, William D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257307, H01L 27108

Patent

active

052412016

ABSTRACT:
A new semiconductor memory device for performing a read/write of information of randomly accessed address includes a plurality of memory cells put in parallel arrays. Each memory cell includes a switching transistor region and a capacitor region. The capacitor regions of the two adjacent memory cells are formed in a common region over the switching transistor region of the two adjacent memory cells. The charge storage electrode of the capacitor region has the shape of a loop. The charge storage electrodes are formed by using self-alignment.

REFERENCES:
patent: 4958318 (1990-09-01), Harari
patent: 4985718 (1991-01-01), Ishijima
patent: 5072270 (1991-12-01), Nishimura

Affiliated with

Also associated with

Rating

Dram with concentric adjacent capacitors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dram with concentric adjacent capacitors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dram with concentric adjacent capacitors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2299824