DRAM structure and method of making the same

Details DRAM structure and method of making the same DRAM structure and method of making the same

2007-12-28

2009-12-15

Doan, Theresa T (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S301000, C257S330000, C438S259000

Reexamination Certificate

active

07633109

ABSTRACT:
A DRAM structure has a substrate, a buried transistor with a fin structure, a trench capacitor, and a surface strap on the surface of the substrate. The surface strap is used to electrically connect a drain region to the trench capacitor.

REFERENCES:
patent: 7304342 (2007-12-01), Nirschl et al.
patent: 2004/0248364 (2004-12-01), Hsiao et al.

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