DRAM structure and fabricating method thereof

Details DRAM structure and fabricating method thereof DRAM structure and fabricating method thereof

2005-10-11

2005-10-11

Wilczewski, Mary (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S305000, C257S398000, C257S399000, C257S400000, C257S519000, C257S648000, C257S652000

Reexamination Certificate

active

06953961

ABSTRACT:
A dynamic random access memory (DRAM) structure and a fabricating process thereof are provided. In the fabricating process, a channel region is formed with a doped region having identical conductivity as the substrate in a section adjacent to an isolation structure. The doped region is formed in a self-aligned process by conducting a tilt implantation implanting ions into the substrate through the upper portion of the capacitor trench adjacent to the channel region after forming the trench but before the definition of the active region.

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