DRAM semiconductor memory device with increased reading...

Details DRAM semiconductor memory device with increased reading... DRAM semiconductor memory device with increased reading...

2008-05-13

2008-05-13

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Capacitors

C365S203000, C365S210130

Reexamination Certificate

active

07372719

ABSTRACT:
A DRAM semiconductor memory device with increased reading accuracy and a method for increasing the reading accuracy of a DRAM memory cell are provided. First and second bit lines are connected to a sense amplifier and are connected in each case to a further memory cell. The gates of the further memory cells are driven via a driving circuit device. An equalization voltage of the two bit lines is influenced in the event of a precharge operation, and a capacitive disequilibrium is avoided at inputs of a sense amplifier due to the voltages on the bit lines in the event of reading the memory cell.

REFERENCES:
patent: 5062079 (1991-10-01), Tsuchida et al.
patent: 5982695 (1999-11-01), Mukai
patent: 6738282 (2004-05-01), Jo
patent: 6928012 (2005-08-01), Camacho et al.

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