DRAM semiconductor device

Details DRAM semiconductor device DRAM semiconductor device

1996-06-27

1999-08-03

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257307, 257309, 257408, 257296, 365174, 365182, 438210, 438232, H01L 27108, H01L 2976, H01L 2994, H01L 31119

Patent

active

059329068

ABSTRACT:
A semiconductor device is provided in which conjunction leakage current from a conductive layer to a semiconductor substrate is restrained and the electric field in the vicinity of a region immediately below a gate electrode is relieved. The device includes n.sup.+ and n.sup.++ impurity diffusion layers electrically connected with a columnar conductive layer at a contact portion. The distance L4 from contact portion to n.sup.+ impurity diffusion layer, the distance L5 from n.sup.++ impurity diffusion layer to a source/drain region, and the distance L6 from n.sup.+ impurity diffusion layer to the region immediately below the side surface of gate electrode are approximately the same, and columnar conductive layer and gate electrode are formed close to each other to such a degree that their distance L7 is almost the same as the distance L2 from the surface of semiconductor substrate to the top surface of gate electrode.

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