Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-07-16
1994-10-25
Limanek, Robert
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257313, 257297, H01L 2978, H01L 2992
Patent
active
053592166
ABSTRACT:
The present invention teaches a new method for fabrication of DRAM cells having an upper capacitor plate over the polysilicon storage gate. To provide a very high specific capacitance and very good integrity between the first poly storage gate and the (second or third poly) upper capacitor plate, the dielectric is formed as an oxide
itride composite which is then reoxidized. This provides the advantages of high dielectric integrity, high specific capacitance, uniformity and reproducibility.
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Coleman Donald J.
Haken Roger A.
Bassuk Lawrence J.
Donaldson Richard L.
Heiting Leo N.
Limanek Robert
Texas Instruments Incorporated
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