Dram memory device with improved refresh characteristic

Details Dram memory device with improved refresh characteristic Dram memory device with improved refresh characteristic

2011-01-04

2011-01-04

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Systems using particular element

Capacitors

C365S145000, C365S189160, C365S190000, C365S222000

Reexamination Certificate

active

07864559

ABSTRACT:
A semiconductor memory device and a method for operating the same can improve a refresh characteristic of the semiconductor memory device by physically writing only logic low data in memory cells, irrespective of logic level of input data, either high or low. The semiconductor memory device includes a positive word line configured to control a first memory cell connected to a positive bit line, a negative word line configured to control a second memory cell connected to a negative bit line, and a word line control circuit configured to enable one of the positive word line and the negative word line according to a logic level of data in a write operation.

REFERENCES:
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patent: 6853595 (2005-02-01), Sawamura et al.
patent: 7440352 (2008-10-01), Nam
patent: 1020040033256 (2004-04-01), None
patent: 1020050078242 (2005-08-01), None
patent: 1020060087199 (2006-08-01), None
Notice of Allowance issued from Korean Intellectual Property Office on Aug. 26, 2009 with an English Translation.

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