DRAM memory circuit with sense amplifiers

Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing

Reexamination Certificate

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Details

C365S208000, C327S055000, C327S057000

Reexamination Certificate

active

06970390

ABSTRACT:
In a DRAM memory circuit, the sense amplifiers, for amplifying the differential voltage sensed between the cores of a bit line, in each case contain two transistor circuits, each of which has two switching transistors. The first transistor circuit pulls the lower potential of the sensed differential voltage down to a defined low logic potential. The second transistor circuit pulls the higher potential up to a defined high logic potential. According to the invention, all the transistors in the sense amplifier are field-effect transistors of the same conduction type, in the case of which the channel is at low impedance if the gate potential is higher than the source potential at least by the amount of the threshold voltage Vth. The second transistor circuit may contain, for each of its two switching transistors, in each case a pump circuit in order to boost the gate of that switching transistor which is intended to pull up the higher logic potential to a potential which is higher than the high logic potential by at least the amount of the threshold voltage Vth.

REFERENCES:
patent: 5701268 (1997-12-01), Lee et al.
patent: 5869999 (1999-02-01), Mawet
patent: 6831513 (2004-12-01), Matsumoto et al.

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