Static information storage and retrieval – Systems using particular element – Ferroelectric
Patent
1990-03-09
1992-04-28
Bowler, Alyssa H.
Static information storage and retrieval
Systems using particular element
Ferroelectric
365149, 365222, G11C 700, G11C 1122
Patent
active
051093570
ABSTRACT:
An improved DRAM memory cell uses ferroelectric material as the dielectric between capacitor plates. Preferably polycrystalline PZT or a perovskite is used for the ferroelectric, and the polar axes of the dipoles in the ferroelectric material in relaxed position are not aligned with the direction of the resulting electric field when voltage is applied to the capacitor plates. Preferably, the dipole orientation is in the plane of the ferroelectric film so that when a write voltage is removed from the capacitor plate, the dipoles tend to relax to a non-aligned position. When the cell is read or refreshed, increased charge is drawn from the bit line and resides on the capacitor plate in order to reorient the relaxed dipoles. The charge developed on the plate hence is magnified.
REFERENCES:
patent: 2938194 (1960-05-01), Anderson
patent: 2957164 (1960-10-01), Long et al.
patent: 3232856 (1966-02-01), Klach et al.
patent: 3279947 (1966-10-01), Kaiser
patent: 3426255 (1969-02-01), Heywang
patent: 3472776 (1969-10-01), Derbyshire
patent: 4169258 (1979-09-01), Tannas, Jr.
patent: 4363111 (1982-12-01), Heightley et al.
patent: 4536785 (1985-08-01), Gibbons
patent: 4873664 (1989-10-01), Eaton, Jr.
patent: 4888630 (1989-12-01), Paterson
patent: 4888733 (1989-12-01), Mobley
patent: 4893272 (1990-01-01), Eaton, Jr. et al.
RCA Technical Notes "Reduction of Waiting Time in Ferroelectrics" by Taylor (Apr. 3, 1969).
"Ferroelectric Crystals" by Franco Jona et al. MacMillan Co., N.Y. (1962) pp. 216, 235, 240-242, 161-169, Chpt. IV, pt. 8.
Pulvari, "Research on the Application of Ferro- and Ferrielectric Phenomena in Computer Devices" RTD Tech. Doc. RTD-TDR-634002 (1963).
Kaufman, "An Expandable Ferroelectric Random Access Memory", IEEE Trans. on Computers, vol. C-22, No. 2 (Feb. 1973).
Bowler Alyssa H.
Manoz Edward D.
Ramtron Corporation
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