DRAM matrix of basic organizational units each with pair of capa

Details DRAM matrix of basic organizational units each with pair of capa DRAM matrix of basic organizational units each with pair of capa

1997-07-29

1999-09-28

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257303, 257306, H01L 27108, H01L 2976, H01L 2994, H01L 31119

Patent

active

059593210

ABSTRACT:
A dynamic random access memory (DRAM) organized as a matrix of basic organizational units each having a capacitor pair. Each capacitor pair has one of the first capacitors and one of the second capacitors in it. Each basic organizational unit is arranged as follows: a first word line and a second word line are formed, as parallel lines, on the substrate; the first word line lies between a first doped region and a second doped region to define a first transistor; the second word line lies between the second doped region of the first transistor and a third doped regions to define a second transistor; a bit line lies on the second doped region of the substrate at an oblique angle to the first word line and second word line; the first capacitor overlies the first doped region and the first word line, is substantially centered over the first doped region, is connected to the first doped region via a first contact hole, and has a hexagon-shaped planar portion; the second capacitor overlies the third doped region and the second word line, is substantially centered over the third doped region, is connected to the third doped region via a second contact hole, and has a hexagon-shaped planar portion; and a center point of each of the first doped region, second doped region and third doped region of the basic organizational unit are connectable by an imaginary straight characteristic line.

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