DRAM having trench type capacitor extending through field oxide

Details DRAM having trench type capacitor extending through field oxide DRAM having trench type capacitor extending through field oxide

1992-08-24

1994-07-12

Limanek, Robert

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257301, 257304, H01L 2968, H01L 2906

Patent

active

053291468

ABSTRACT:
In a memory cell formed of one transistor and one capacitor, the capacitor includes a stacked type capacitor region extending over the gate electrode and word line of the transfer gate transistor, and a trench type capacitor region extending into a groove part formed in the field isolation film for element separation. The trench type capacitor region is formed between a pair of word lines extending on the field isolation film. Each storage node of adjacent capacitors is isolated on the bottom surface of the groove.

REFERENCES:
patent: 4721987 (1988-01-01), Baglee et al.
patent: 4833094 (1989-05-01), Kenney
patent: 4877750 (1989-10-01), Okumura
patent: 4905064 (1990-02-01), Yabu et al.
patent: 5119155 (1992-06-01), Hieda et al.
patent: 5170372 (1992-12-01), Wong

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