Static information storage and retrieval – Read/write circuit – Data refresh
Patent
1994-11-22
1995-12-26
Nguyen, Tan T.
Static information storage and retrieval
Read/write circuit
Data refresh
36518907, 365230, 365 02, 3652385, G11C 11401, G11C 700
Patent
active
054793726
ABSTRACT:
A DRAM control circuit, having a second counter 12 which counts the number of times of generation of a refresh request signal generated by a first timer circuit 100, a set value register 13 which holds the maximum number of reservations for refreshing a DRAM 52, and a second comparator 14 which compares the count value of the counter 12 and a value held by the set value register 13, which cancels high-speed page mode and refreshes the DRAM 52 in a predetermined procedure only at a time when the second comparator 14 detects coincidence between the count value of the second counter 12 and a value held by the set value register 13. This configuration enables it to limit refreshing during high-speed page mode, while achieving a DRAM control circuit capable of operating in high-speed page mode more efficiently.
REFERENCES:
patent: 5021951 (1991-06-01), Baba
patent: 5295109 (1994-03-01), Nawaki
patent: 5313428 (1994-05-01), Inoue
patent: 5347491 (1994-09-01), Kagami
Fujita Kouichi
Sato Fumiki
Mitsubishi Denki & Kabushiki Kaisha
Nguyen Tan T.
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